Interface Stresses Due to Imbalanced Diffusion in Wirebonding Between Gold (Au) and Aluminum (Al)
Keywords:
Aluminium, Diffusion, Gold, Interface stress, Intermetallic compounds, Scientific publication, WirebondingAbstract
Wirebonding is a fundamental process in semiconductor
manufacturing, essential for creating reliable electrical
connections between integrated circuits and their packaging.
This paper explores the complexities of interface stresses
arising from solid-state diffusion during wirebonding, with
particular attention to the interactions between gold (Au)
wires and aluminum (Al) bond pads. Due to the different
diffusion rates of Au and Al atoms, intermetallic compounds
(IMCs) form at the interface, playing a critical role in bond
integrity. However, the growth of these IMCs also generates
significant mechanical stresses, which can compromise the
reliability and lifespan of wirebonded connections. Through
detailed experimental analysis, this study investigates the
kinetics of IMC growth, the influence of activation energy on
diffusion, and the resulting microstructural evolution at
bonded interfaces. By clarifying the mechanisms driving IMC
formation and associated stresses, the paper offers insights
into optimizing wirebonding processes. These include the
selection of suitable bonding parameters and materials to
reduce stress and enhance the performance and durability
of semiconductor devices. Ultimately, the findings support
the advancement of wirebonding techniques aimed at
improving the reliability and efficiency of semiconductor
packaging.
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